ION-IMPLANTATION AND PROTON-ENHANCED DIFFUSION IN SEMICONDUCTORS

被引：0
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作者：
GIBBONS, JF [1 ]
机构：
[1] STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
来源：
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY | 1975年 / 170卷 / AUG24期
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中图分类号：
O6 [化学];
学科分类号：
0703 ;
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页码：29 / 29
页数：1
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