INVESTIGATION OF INFLUENCE OF LOW-TEMPERATURE ANNEALING TREATMENTS ON INTERFACE STATE DENSITY AT SI-SIO2 INTERFACE

被引：46

作者：

YEOW, YT ^{[1
]}

LAMB, DR ^{[1
]}

BROTHERTON, SD ^{[1
]}

机构：

[1] UNIV SOUTHAMPTON,DEPT ELECTR,SOUTHAMPTON SO9 5NH,ENGLAND

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1975年 / 8卷 / 13期

关键词：

D O I：

10.1088/0022-3727/8/13/011

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1495 / &

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