EFFECT OF RECOMBINATION OF THE NON-EQUILIBRIUM CARRIERS ON THE HIGH-FREQUENCY GENERATION IN SEMICONDUCTORS

被引:5
作者
PAUL, SS [1 ]
BHATTACHARYA, DP [1 ]
机构
[1] JADAVPUR UNIV,DEPT PHYS,CALCUTTA 700032,W BENGAL,INDIA
关键词
D O I
10.1016/0038-1098(85)90708-2
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:527 / 529
页数:3
相关论文
共 15 条
[1]  
ABAKUMOV VN, 1976, SOV PHYS JETP, V44, P345
[2]  
BHATTACHARYA DP, 1980, PHYS STATUS SOLIDI B, V101, P77, DOI 10.1002/pssb.2221010108
[3]   HIGH-FIELD GALVANOMAGNETIC EFFECTS IN COMPENSATED NON-POLAR SEMICONDUCTORS [J].
BHATTACHARYA, DP .
PHYSICAL REVIEW B, 1981, 23 (12) :6668-6675
[4]  
Conwell E M, 1967, HIGH FIELD TRANSPORT
[5]   SECOND-HARMONIC GENERATION DUE TO HOT ELECTRONS IN SEMICONDUCTORS [J].
DAS, P .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (10) :4206-&
[6]  
DAVYDOV BI, 1937, ZH EKSP TEOR FIZ, V7, P1069
[7]   GALVANOMAGNETIC AND RECOMBINATION EFFECTS IN SEMICONDUCTORS IN A STRONG ELECTRIC-FIELD [J].
KACHLISHVILI, ZS .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1976, 33 (01) :15-51
[8]  
KACHLISHVILI ZS, 1968, FIZ TEKH POLUPROV, V2, P580
[9]   OPTIMUM SECOND-HARMONIC GENERATION IN NONDEGENERATE SEMICONDUCTORS USING DC ELECTRIC FIELDS [J].
KAW, PK .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (02) :793-&
[10]   LOW-TEMPERATURE BREAKDOWN CHARACTERISTICS IN N-GE [J].
KHAN, FA ;
BHATTACHARYA, DP .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (19) :3463-3473