ELECTRODEPOSITION AND CHARACTERIZATION OF CUPROUS-OXIDE FILMS

被引：30

作者：

CHATTERJEE, AP

MUKHOPADHYAY, AK

CHAKRABORTY, AK

SASMAL, RN

LAHIRI, SK

机构：

[1] Central Glass and Ceramic Research Institute, Jadavpur, Calcutta

来源：

MATERIALS LETTERS | 1991年 / 11卷 / 10-12期

关键词：

D O I：

10.1016/0167-577X(91)90134-R

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Semiconducting cuprous oxide films were prepared by electrodeposition onto copper substrates from an alkaline CuSO4 bath at temperatures between 40 and 60-degrees-C. The Cu2O films, which were deposited using a potentiostatic method, were found to exhibit exponential growth kinetics. X-ray diffraction studies revealed the formation of only Cu2O films with (200) preferred orientation. The observed current-voltage characteristics of the Cu2O/Cu device structures were found to be similar to that of a metal-insulator-semiconductor (MIS) tunnel diode, indicating the presence of a thin unidentified interfacial insulating layer between the copper substrate and the cuprous oxide film.

引用

页码：358 / 362

页数：5

共 18 条

[1] PROPERTIES OF REACTIVELY-SPUTTERED COPPER-OXIDE THIN-FILMS [J].