ELECTRON ELECTRON INTERACTION IN SEMICONDUCTORS WITH APPLICATION TO HOT-ELECTRON TRANSISTORS IN SILICON AND GALLIUM-ARSENIDE

被引：27

作者：

RORISON, JM

HERBERT, DC

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1986年 / 19卷 / 21期

关键词：

D O I：

10.1088/0022-3719/19/21/006

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：3991 / 4010

页数：20

共 21 条

[11] EFFECT OF ELECTRON-ELECTRON SCATTERING ON MONTE-CARLO STUDIES OF TRANSPORT IN SUB-MICRON SEMICONDUCTOR-DEVICES
LUGLI, P
FERRY, DK
[J]. PHYSICA B & C, 1983, 117 (MAR): : 251 - 253
[12] EFFECT OF ELECTRON-ELECTRON AND ELECTRON-PLASMON INTERACTIONS ON HOT CARRIER TRANSPORT IN SEMICONDUCTORS
LUGLI, P
FERRY, DK
[J]. PHYSICA B & C, 1985, 129 (1-3): : 532 - 536
[13] MAHAN GD, 1981, MANY PARTICLE PHYSIC
[14] INFLUENCE OF COUPLED PLASMON-POLAR OPTICAL PHONON MODES ON THE MOBILITY OF ELECTRONS IN GAAS
MOGLESTUE, C
[J]. IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1984, 131 (06): : 188 - 192
[15] A COLLECTIVE DESCRIPTION OF ELECTRON INTERACTIONS .4. ELECTRON INTERACTION IN METALS
PINES, D
[J]. PHYSICAL REVIEW, 1953, 92 (03): : 626 - 636
[16] Pines D., 1963, ELEMENTARY EXCITATIO
[17] MAJORITY-CARRIER CAMEL DIODE
SHANNON, JM
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (01) : 63 - 65
[18] HOT-ELECTRON CAMEL TRANSISTOR
SHANNON, JM
[J]. IEE JOURNAL ON SOLID-STATE AND ELECTRON DEVICES, 1979, 3 (05): : 142 - 144
[19] SHANNON JM, 1983, I PHYS C SER, V69, P45
[20] INFLUENCE OF INTER-CARRIER SCATTERING ON HOT-ELECTRON DISTRIBUTION FUNCTION IN GAAS
TAKENAKA, N
INOUE, M
INUISHI, Y
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1979, 47 (03) : 861 - 868