ELECTRON ELECTRON INTERACTION IN SEMICONDUCTORS WITH APPLICATION TO HOT-ELECTRON TRANSISTORS IN SILICON AND GALLIUM-ARSENIDE

被引：27

作者：

RORISON, JM

HERBERT, DC

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1986年 / 19卷 / 21期

关键词：

D O I：

10.1088/0022-3719/19/21/006

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：3991 / 4010

页数：20

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