SUBPLANTATION MODEL FOR FILM GROWTH FROM HYPERTHERMAL SPECIES - APPLICATION TO DIAMOND

被引：465

作者：

LIFSHITZ, Y

KASI, SR

RABALAIS, JW

机构：

来源：

PHYSICAL REVIEW LETTERS | 1989年 / 62卷 / 11期

关键词：

D O I：

10.1103/PhysRevLett.62.1290

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1290 / 1293

页数：4

共 20 条

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[2]

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[3]

ANGUS JC, 1986, PLASMA DEPOSITED THI, pCH4

[4]

CHAIKOVSKII EF, 1981, SOV PHYS-CRYSTALLOGR, V26, P122

[5]

DEARNALEY G, 1973, ION IMPLANTATION, P155

[6]

FELDMAN LC, 1986, FUNDAMENTALS SURFACE, pCH6

[7]

GREENE JE, 1987, SOLID STATE TECHNOL, V30, P115

[8]

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[9] TRANSPARENT CARBON-FILM PREPARED BY MASS-SEPARATED NEGATIVE-CARBON-ION-BEAM DEPOSITION [J].

ISHIKAWA, J ;

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JOURNAL OF APPLIED PHYSICS, 1987, 61 (07) :2509-2515

[10] INTERACTIONS OF LOW-ENERGY REACTIVE IONS WITH SURFACES .4. CHEMICALLY BONDED DIAMOND-LIKE FILMS FROM ION-BEAM DEPOSITION [J].

KASI, SR ;

KANG, H ;

RABALAIS, JW .

JOURNAL OF CHEMICAL PHYSICS, 1988, 88 (09) :5914-5924

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