DISORDERING OF SI-IMPLANTED GAAS-ALGAAS SUPERLATTICES BY RAPID THERMAL ANNEALING

[1] KINETICS OF IMPLANTATION ENHANCED INTERDIFFUSION OF GA AND AL AT GAAS-GAXAL1-XAS INTERFACES [J]. APPLIED PHYSICS LETTERS, 1986, 49 (04) : 223 - 225

[2] DISORDER OF AN ALAS-GAAS SUPER-LATTICE BY SILICON IMPLANTATION [J]. APPLIED PHYSICS LETTERS, 1982, 40 (10) : 904 - 906

[3] IMPLANTATION DISORDERING OF ALXGA1-XAS SUPERLATTICES [J]. APPLIED PHYSICS LETTERS, 1985, 47 (02) : 130 - 132

[4] SI-IMPLANTED AND DISORDERED STRIPE-GEOMETRY ALXGA1-XAS-GAAS QUANTUM WELL LASERS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (09) : 903 - 905

[5] COMPOSITIONAL DISORDERING OF GAAS-ALXGA1-XAS SUPERLATTICE BY GA FOCUSED ION-BEAM IMPLANTATION AND ITS APPLICATION TO SUB-MICRON STRUCTURE FABRICATION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (07): : L516 - L518

[6] MECHANISM FOR ION-INDUCED MIXING OF GAAS-ALGAAS INTERFACES BY RAPID THERMAL ANNEALING [J]. APPLIED PHYSICS LETTERS, 1988, 53 (17) : 1635 - 1637

[7] ALUMINUM ION-IMPLANTATION ENHANCED INTERMIXING OF GAAS-ALGAAS QUANTUM-WELL STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (01) : 190 - 194

[8] EFFECT OF RAPID THERMAL ANNEALING FOR THE COMPOSITIONAL DISORDERING OF SI-IMPLANTED ALGAAS/GAAS SUPERLATTICES [J]. APPLIED PHYSICS LETTERS, 1987, 50 (09) : 519 - 521

[9] LAIDIG WD, 1981, APPL PHYS LETT, V38, P776, DOI 10.1063/1.92159

[10] INDUCED DISORDER OF ALAS-ALGAAS-GAAS QUANTUM-WELL HETEROSTRUCTURES [J]. JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (01) : 1 - 20

[1] KINETICS OF IMPLANTATION ENHANCED INTERDIFFUSION OF GA AND AL AT GAAS-GAXAL1-XAS INTERFACES [J]. APPLIED PHYSICS LETTERS, 1986, 49 (04) : 223 - 225

[2] DISORDER OF AN ALAS-GAAS SUPER-LATTICE BY SILICON IMPLANTATION [J]. APPLIED PHYSICS LETTERS, 1982, 40 (10) : 904 - 906

[3] IMPLANTATION DISORDERING OF ALXGA1-XAS SUPERLATTICES [J]. APPLIED PHYSICS LETTERS, 1985, 47 (02) : 130 - 132

[4] SI-IMPLANTED AND DISORDERED STRIPE-GEOMETRY ALXGA1-XAS-GAAS QUANTUM WELL LASERS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (09) : 903 - 905

[5] COMPOSITIONAL DISORDERING OF GAAS-ALXGA1-XAS SUPERLATTICE BY GA FOCUSED ION-BEAM IMPLANTATION AND ITS APPLICATION TO SUB-MICRON STRUCTURE FABRICATION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (07): : L516 - L518

[6] MECHANISM FOR ION-INDUCED MIXING OF GAAS-ALGAAS INTERFACES BY RAPID THERMAL ANNEALING [J]. APPLIED PHYSICS LETTERS, 1988, 53 (17) : 1635 - 1637

[7] ALUMINUM ION-IMPLANTATION ENHANCED INTERMIXING OF GAAS-ALGAAS QUANTUM-WELL STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (01) : 190 - 194

[8] EFFECT OF RAPID THERMAL ANNEALING FOR THE COMPOSITIONAL DISORDERING OF SI-IMPLANTED ALGAAS/GAAS SUPERLATTICES [J]. APPLIED PHYSICS LETTERS, 1987, 50 (09) : 519 - 521

[9] LAIDIG WD, 1981, APPL PHYS LETT, V38, P776, DOI 10.1063/1.92159

[10] INDUCED DISORDER OF ALAS-ALGAAS-GAAS QUANTUM-WELL HETEROSTRUCTURES [J]. JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (01) : 1 - 20