SEMI-INSULATING GAAS IN UHF ELECTRONICS

被引:0
作者
MILVIDSKII, MG
OSVENSKII, VB
SHERSHAKOVA, IN
机构
来源
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA | 1983年 / 26卷 / 10期
关键词
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:5 / 17
页数:13
相关论文
共 26 条
[1]  
BOLSHEVA YN, 1982, KRISTALLOGRAFIYA+, V27, P722
[2]  
Fairman R. D., 1980, Semi-Insulating III-V Materials, P83
[3]  
Favennec P. N., 1980, Semi-Insulating III-V Materials, P130
[4]  
Goltzene A., 1980, Semi-Insulating III-V Materials, P221
[5]   STOICHIOMETRY-CONTROLLED COMPENSATION IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J].
HOLMES, DE ;
CHEN, RT ;
ELLIOTT, KR ;
KIRKPATRICK, CG .
APPLIED PHYSICS LETTERS, 1982, 40 (01) :46-48
[6]  
JACOB J, 1982, J CRYSTAL GROWTH, V58, P455
[7]  
KASAHARA I, 1980, SEMIINSULATING 3 5 M, P115
[8]  
Martin G. M., 1980, Semi-Insulating III-V Materials, P13
[9]  
MASTEROV VF, 1983, IZV VYSSH UCHEBN ZAV, P45
[10]  
Mircea-Roussel A., 1980, Semi-Insulating III-V Materials, P133