COMPLEX HETEROGENEOUS EQUILIBRIA IN VAPOR-PHASE CRYSTAL-GROWTH SYSTEMS

[1] INCORPORATION OF PHOSPHORUS IN SILICON EPITAXIAL LAYER GROWTH [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (10) : 1354 - 1357

[2] DARKEN LS, 1953, PHYSICAL CHEM METALS

[3] Gaskell D.R, 1981, INTRO METALLURGICAL, Vsecond, P421

[4] Gokcen, 1975, THERMODYNAMICS

[5] RAO YK, UNPUB J CRYSTAL GROW

[6] WALL FT, 1974, CHEM THERMODYNAMICS

[7] VAPOR PHASE EQUILIBRIA IN GALLIUM-CHLORINE ANDGALLIUM ARSENIDE-CHLORINE SYSTEMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (11) : 1153 - &

[8] 1971, JANAF THERMOCHEMICAL

[1] INCORPORATION OF PHOSPHORUS IN SILICON EPITAXIAL LAYER GROWTH [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (10) : 1354 - 1357

[2] DARKEN LS, 1953, PHYSICAL CHEM METALS

[3] Gaskell D.R, 1981, INTRO METALLURGICAL, Vsecond, P421

[4] Gokcen, 1975, THERMODYNAMICS

[5] RAO YK, UNPUB J CRYSTAL GROW

[6] WALL FT, 1974, CHEM THERMODYNAMICS

[7] VAPOR PHASE EQUILIBRIA IN GALLIUM-CHLORINE ANDGALLIUM ARSENIDE-CHLORINE SYSTEMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (11) : 1153 - &

[8] 1971, JANAF THERMOCHEMICAL