EPITAXIAL GROWTH OF GAAS BY CATHODIC SPUTTERING

被引:0
|
作者
FLOOD, JJ
MOLNAR, B
FRANCOMBE, MH
机构
关键词
D O I
暂无
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:C185 / C185
页数:1
相关论文
共 50 条
  • [2] Epitaxial growth of Fe on GaAs by ion beam sputtering
    Monteverde, F
    Michel, A
    Guérin, P
    Eymery, JP
    SURFACE SCIENCE, 2001, 482 : 872 - 877
  • [3] EPITAXIAL-GROWTH OF ZNTE ON GAAS(100) BY RF SPUTTERING
    TOKUMITSU, Y
    KITAYAMA, H
    KAWABUCHI, A
    IMURA, T
    OSAKA, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1989, 28 (02): : 293 - 294
  • [4] EPITAXIAL-GROWTH OF CDTE ON GAAS(100) BY RF SPUTTERING
    TOKUMITSU, Y
    KAWABUCHI, A
    KITAYAMA, H
    IMURA, T
    OSAKA, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1989, 28 (03): : 464 - 467
  • [5] Enhanced epitaxial growth on substrates modified by ion sputtering: Ge on GaAs(110)
    Brake, J
    Wang, XS
    Pechman, RJ
    Weaver, JH
    PHYSICAL REVIEW B, 1996, 53 (16): : 11170 - 11175
  • [6] Epitaxial growth of rhenium with sputtering
    Oh, S
    Hite, DA
    Cicak, K
    Osborn, KD
    Simmonds, RW
    McDermott, R
    Cooper, KB
    Steffen, M
    Martinis, JM
    Pappas, DP
    THIN SOLID FILMS, 2006, 496 (02) : 389 - 394
  • [7] Epitaxial growth of Ni films by radio frequency sputtering on GaAs(001) with a TiN buffer
    Makihara, K
    Barna, A
    Hashimoto, M
    Shi, J
    Maruyama, S
    THIN SOLID FILMS, 2005, 485 (1-2) : 235 - 240
  • [8] GROWTH PYRAMIDS IN EPITAXIAL GAAS
    JOYCE, BD
    MULLIN, JB
    SOLID STATE COMMUNICATIONS, 1966, 4 (09) : 463 - &
  • [9] EPITAXIAL GROWTH OF ZNSE ON GAAS
    BACZEWSKI, A
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (03) : C62 - C62
  • [10] EPITAXIAL GROWTH OF ZNSE ON GAAS
    BACZEWSK.A
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (06) : 577 - &