EPITAXIAL GROWTH OF GALLIUM ARSENIDE ON GERMANIUM SUBSTRATES .1. THE RELATIONSHIP BETWEEN FAULT FORMATION IN GALLIUM ARSENIDE FILMS AND THE SURFACE OF THEIR GERMANIUM SUBSTRATE

被引：16

作者：

GABOR, T

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1964年 / 111卷 / 07期

关键词：

D O I：

10.1149/1.2426260

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：817 / 820

页数：4

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