RADIATION-DAMAGE CONSTANTS OF LIGHT-EMITTING DIODES BY A LOW-CURRENT EVALUATION METHOD

被引：12

作者：

HUM, RH ^{[1
]}

BARRY, AL ^{[1
]}

机构：

[1] COMMUN RES CTR, DEPT COMMUN, OTTAWA K2H 8S2, ONTARIO, CANADA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1975年 / 22卷 / 06期

关键词：

D O I：

10.1109/TNS.1975.4328154

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2482 / 2487

页数：6

共 9 条

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[6] OBSERVATION OF RECOMBINATION-ENHANCED DEFECT REACTIONS IN SEMICONDUCTORS [J].

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[7]

LARIN F, 1968, RADIATION EFFECTS SE, P14

[8] RADIATION-DAMAGE AND HARDENING EFFECTS ON COMPENSATED GAAS LIGHT-EMITTING DIODES [J].

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[9]

SZE SM, 1969, PHYSICS SEMICONDUCTO, P97

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