TRIPLET EXCITONS IN POROUS SILICON AND SILOXENE

被引：40
作者：
BRANDT, MS
STUTZMANN, M
机构：
[1] Walter Schottky Institut, Technische Universität München, D-85748 Garching, Am Coulombwall
来源：
SOLID STATE COMMUNICATIONS | 1995年 / 93卷 / 06期
关键词：
SEMICONDUCTORS; LUMINESCENCE; ELECTRON PARAMAGNETIC RESONANCE;
D O I：
10.1016/0038-1098(94)00819-1
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The microscopic nature of the excited state responsible for the strong visible photoluminescence in porous silicon and siloxene is determined by optically detected magnetic resonance (ODMR). The observation of dipole-forbidden Delta m = +/-2-transitions proves that this excited state is a triplet exciton. The allowed Delta m = +/-1-transition has the characteristic shape of a Pake-doublett due to spin-spin interaction, with a linewidth of approximate to 500 G independent of the photon energy monitored. These results are qualitatively incompatible with geometric quantum confinement, and point to a molecular origin of the radiative center.
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页码：473 / 477
页数：5
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