RECOVERY RATES IN SEMICONDUCTOR-LASER AMPLIFIERS - OPTICAL AND ELECTRICAL BIAS DEPENDENCIES

被引：36

作者：

MANNING, RJ

DAVIES, DAO

LUCEK, JK

机构：

[1] Technology Research Unit, BT Laboratories, Suffolk IP4 7RE, Martlesham Heath, Ipswich

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 15期

关键词：

OPTICAL COMMUNICATION; SEMICONDUCTOR OPTICAL AMPLIFIERS;

D O I：

10.1049/el:19940840

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors measure the dependence of the gain recovery rate in semiconductor laser amplifiers on optical and electrical bias conditions, and show that rapid recovery is achievable (in times approximately 10ps) with modest optical bias powers (less-than-or-equal-to 50mW).

引用

页码：1233 / 1235

页数：3

共 6 条

[1] SEMICONDUCTOR-LASER AMPLIFIER AS OPTICAL SWITCHING GATE [J].