STUDY OF SPUTTERED HFO2 THIN-FILMS ON SILICON

被引：69
|
作者：
KUO, CT [1 ]
KWOR, R [1 ]
JONES, KM [1 ]
机构：
[1] NATL RENEWABLE ENERGY LAB,GOLDEN,CO 80401
来源：
THIN SOLID FILMS | 1992年 / 213卷 / 02期
关键词：
D O I：
10.1016/0040-6090(92)90291-I
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Thin HfO2 films were deposited on Si(100) wafers by magnetron sputtering, followed by a high temperature anneal in oxygen. Structure evolution and/or allotropic transformation occurred during the annealing process. A very thin well-defined SiO2 layer was also formed at the HfO2-Si interface as a result of annealing. The HfO2/SiO2 film showed a high dielectric constant, very low leakage current, extremely high dielectric strength, low dielectric loss, well-behaved capacitance-voltage characteristics and good stability, making it a viable candidate for applications in very-large-scale and ultralarge-scale integration circuits.
引用
收藏
页码：257 / 264
页数：8
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