ON THE NATURE OF RADIATION DEFECTS RESPONSIBLE FOR FERMI LEVEL PINNING EFFECT IN INP

被引：8
作者：
PYSHNAYA, NB
RADATSAN, SI
TIGINYANU, IM
URSAKI, VV
URSU, VA
ALIEV, IM
HALILOV, HA
机构：
[1] Institute of Applied Physics, Academy of Sceinces of the Ssr, Kishinev
来源：
CRYSTAL RESEARCH AND TECHNOLOGY | 1991年 / 26卷 / 06期
关键词：
D O I：
10.1002/crat.2170260629
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
[No abstract available]
引用
收藏
页码：K129 / K135
页数：7
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