HIGH-RESOLUTION OPTICAL-RECORDING ON A-SI FILMS

被引:9
|
作者
GOTCHIYAEV, VZ
KOROLKOV, VP
SOKOLOV, AP
CHERNUKHIN, VP
机构
[1] Institute of Automation, Electrometry USSR Academy of Sci., Novosibirsk
关键词
D O I
10.1016/S0022-3093(05)80361-8
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The changes in optical properties and structure of a-Si films under laser annealing and spatial resolution of optical recording has been studied. The mechanism of the observed changes is discussed. The spatial resolution of up to 2000 lines/mm has been obtained. The difference of solubility for irradiated and nonirradiated regions of the samples has been observed. It is shown that the optical recording on a-Si films is promising for producing of half-tone photomasks of kinofom optical elements.
引用
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页码:1297 / 1300
页数:4
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