INSITU DETERMINATION OF PHOSPHORUS COMPOSITION IN GAAS1-XPX GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

被引：37
作者：
HOU, HQ
LIANG, BW
CHIN, TP
TU, CW
机构：
来源：
APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 03期
关键词：
D O I：
10.1063/1.105601
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report for the first time an in situ determination of phosphorus compositions in a mixed group-V compound, such as GaAs(1-x)P(x), grown by gas-source molecular beam epitaxy. Reflection high-energy electron diffraction intensity oscillations from As-limited and (As + P)-limited growth are observed on a Ga-rich GaAs surface. The phosphorus composition is therefore deduced from the different growth rates. Viability of this technique is strongly confirmed by the good agreement with the phosphorus compositions determined ex situ by x-ray rocking curve measurements on GaAs/GaAsP strained-layer superlattice structures.
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页码：292 / 294
页数：3
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共 13 条
  • [1] GAAS, GAP, AND GAASXP1-X EPITAXIAL FILMS GROWN BY MOLECULAR BEAM DEPOSITION
    ARTHUR, JR
    LEPORE, JJ
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04): : 545 - &
  • [2] Casey H.C., 1978, HETEROSTRUCTURE LASE
  • [3] DETERMINATION OF V/III RATIOS ON PHOSPHIDE SURFACES DURING GAS SOURCE MOLECULAR-BEAM EPITAXY
    CHIN, TP
    LIANG, BW
    HOU, HQ
    HO, MC
    CHANG, CE
    TU, CW
    [J]. APPLIED PHYSICS LETTERS, 1991, 58 (03) : 254 - 256
  • [4] COMPOSITION EFFECTS IN THE GROWTH OF GA(IN)ASYP1-Y ALLOYS BY MBE
    FOXON, CT
    JOYCE, BA
    NORRIS, MT
    [J]. JOURNAL OF CRYSTAL GROWTH, 1980, 49 (01) : 132 - 140
  • [5] VAPOR SOLID DISTRIBUTION RELATION IN MOCVD GAASXP1-X AND INASXP1-X
    FUKUI, T
    KOBAYASHI, N
    [J]. JOURNAL OF CRYSTAL GROWTH, 1985, 71 (01) : 9 - 11
  • [6] PREPARATION AND CHARACTERIZATION OF HIGH-QUALITY INGAAS GAAS STRAINED MULTI-QUANTUM-WELLS GROWN BY MBE
    HOU, HQ
    HUANG, Y
    ZHOU, JM
    [J]. JOURNAL OF CRYSTAL GROWTH, 1990, 99 (1-4) : 306 - 310
  • [7] LIANG BW, IN PRESS MAT RES SOC, V222
  • [8] DYNAMICS OF FILM GROWTH OF GAAS BY MBE FROM RHEED OBSERVATIONS
    NEAVE, JH
    JOYCE, BA
    DOBSON, PJ
    NORTON, N
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 31 (01): : 1 - 8
  • [9] COMPOSITION CONTROL OF GAASP GROWN BY MOLECULAR-BEAM EPITAXY
    NOMURA, T
    OGASAWARA, H
    MIYAO, M
    HAGINO, M
    [J]. JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) : 61 - 64
  • [10] PANISH MB, 1989, ANNU REV MATER SCI, V19, P209
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