NEGATIVE PHOTOCONDUCTIVITY OF TWO-DIMENSIONAL HOLES IN GAAS/ALGAAS HETEROJUNCTIONS

被引：58

作者：

CHOU, MJ ^{[1
]}

TSUI, DC ^{[1
]}

WEIMANN, G ^{[1
]}

机构：

[1] FORSCHUNGSINST DEUTSCH BUNDESPOST,D-6100 DARMSTADT,FED REP GER

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 06期

关键词：

D O I：

10.1063/1.96088

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：609 / 611

页数：3

相关论文

共 11 条

[1] CHAND N, UNPUB
[2] EFFECT OF INVERSION SYMMETRY ON THE BAND-STRUCTURE OF SEMICONDUCTOR HETEROSTRUCTURES
EISENSTEIN, JP
STORMER, HL
NARAYANAMURTI, V
GOSSARD, AC
WIEGMANN, W
[J]. PHYSICAL REVIEW LETTERS, 1984, 53 (27) : 2579 - 2582
[3] ILLUMINATION STIMULATED PERSISTENT CHANNEL DEPLETION AT SELECTIVELY DOPED AL0.3GA0.7AS/GAAS INTERFACE
KASTALSKY, A
HWANG, JCM
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (03) : 333 - 335
[4] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS
LANG, DV
LOGAN, RA
JAROS, M
[J]. PHYSICAL REVIEW B, 1979, 19 (02) : 1015 - 1030
[5] FRACTIONAL QUANTUM HALL-EFFECT IN A TWO-DIMENSIONAL HOLE SYSTEM
MENDEZ, EE
WANG, WI
CHANG, LL
ESAKI, L
[J]. PHYSICAL REVIEW B, 1984, 30 (02): : 1087 - 1089
[6] NONEXPONENTIAL RELAXATION OF CONDUCTANCE NEAR SEMICONDUCTOR INTERFACES
QUEISSER, HJ
[J]. PHYSICAL REVIEW LETTERS, 1985, 54 (03) : 234 - 236
[7] TRANSIENT PHOTOCONDUCTIVITY IN SELECTIVELY DOPED N-TYPE ALXGA1-XAS/GAAS HETEROSTRUCTURES
SCHUBERT, EF
PLOOG, K
[J]. PHYSICAL REVIEW B, 1984, 29 (08): : 4562 - 4569
[8] STORMER HL, 1981, APPL PHYS LETT, V39, P912, DOI 10.1063/1.92604
[9] STORMER HL, 1984, APPL PHYS LETT, V44, P139, DOI 10.1063/1.94580
[10] ENERGY STRUCTURE AND QUANTIZED HALL-EFFECT OF TWO-DIMENSIONAL HOLES
STORMER, HL
SCHLESINGER, Z
CHANG, A
TSUI, DC
GOSSARD, AC
WIEGMANN, W
[J]. PHYSICAL REVIEW LETTERS, 1983, 51 (02) : 126 - 129