NEGATIVE PHOTOCONDUCTIVITY OF TWO-DIMENSIONAL HOLES IN GAAS/ALGAAS HETEROJUNCTIONS

被引:60
作者
CHOU, MJ [1 ]
TSUI, DC [1 ]
WEIMANN, G [1 ]
机构
[1] FORSCHUNGSINST DEUTSCH BUNDESPOST,D-6100 DARMSTADT,FED REP GER
关键词
D O I
10.1063/1.96088
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:609 / 611
页数:3
相关论文
共 11 条
[1]  
CHAND N, UNPUB
[2]   EFFECT OF INVERSION SYMMETRY ON THE BAND-STRUCTURE OF SEMICONDUCTOR HETEROSTRUCTURES [J].
EISENSTEIN, JP ;
STORMER, HL ;
NARAYANAMURTI, V ;
GOSSARD, AC ;
WIEGMANN, W .
PHYSICAL REVIEW LETTERS, 1984, 53 (27) :2579-2582
[3]   ILLUMINATION STIMULATED PERSISTENT CHANNEL DEPLETION AT SELECTIVELY DOPED AL0.3GA0.7AS/GAAS INTERFACE [J].
KASTALSKY, A ;
HWANG, JCM .
APPLIED PHYSICS LETTERS, 1984, 44 (03) :333-335
[4]   TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J].
LANG, DV ;
LOGAN, RA ;
JAROS, M .
PHYSICAL REVIEW B, 1979, 19 (02) :1015-1030
[5]   FRACTIONAL QUANTUM HALL-EFFECT IN A TWO-DIMENSIONAL HOLE SYSTEM [J].
MENDEZ, EE ;
WANG, WI ;
CHANG, LL ;
ESAKI, L .
PHYSICAL REVIEW B, 1984, 30 (02) :1087-1089
[6]   NONEXPONENTIAL RELAXATION OF CONDUCTANCE NEAR SEMICONDUCTOR INTERFACES [J].
QUEISSER, HJ .
PHYSICAL REVIEW LETTERS, 1985, 54 (03) :234-236
[7]   TRANSIENT PHOTOCONDUCTIVITY IN SELECTIVELY DOPED N-TYPE ALXGA1-XAS/GAAS HETEROSTRUCTURES [J].
SCHUBERT, EF ;
PLOOG, K .
PHYSICAL REVIEW B, 1984, 29 (08) :4562-4569
[8]  
STORMER HL, 1981, APPL PHYS LETT, V39, P912, DOI 10.1063/1.92604
[9]  
STORMER HL, 1984, APPL PHYS LETT, V44, P139, DOI 10.1063/1.94580
[10]   ENERGY STRUCTURE AND QUANTIZED HALL-EFFECT OF TWO-DIMENSIONAL HOLES [J].
STORMER, HL ;
SCHLESINGER, Z ;
CHANG, A ;
TSUI, DC ;
GOSSARD, AC ;
WIEGMANN, W .
PHYSICAL REVIEW LETTERS, 1983, 51 (02) :126-129