SIO2 PLANARIZATION BY 2-STEP RF BIAS-SPUTTERING

被引：31

作者：

MOGAMI, T

MORIMOTO, M

OKABAYASHI, H

NAGASAWA, E

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 03期

关键词：

D O I：

10.1116/1.583116

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：857 / 861

页数：5

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