BAND-GAP NARROWING IN THE SPACE-CHARGE REGION OF HEAVILY DOPED SILICON DIODES

被引：21

作者：

LOWNEY, JR

机构：

来源：

SOLID-STATE ELECTRONICS | 1985年 / 28卷 / 1-2期

关键词：

D O I：

10.1016/0038-1101(85)90229-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：187 / 191

页数：5

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