A SELF-ALIGNED IN0.53GA0.47AS JUNCTION FIELD-EFFECT TRANSISTOR GROWN BY MOLECULAR-BEAM EPITAXY

被引：23
作者：
WAKE, D
LIVINGSTONE, AW
ANDREWS, DA
DAVIES, GJ
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 07期
关键词：
D O I：
10.1109/EDL.1984.25919
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：285 / 287
页数：3
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