CHARACTERIZATION OF PROCESS-INDUCED DEFECTS IN SILICON WITH TRIPLE-CRYSTAL DIFFRACTOMETRY

被引：56
|
作者：
LOMOV, AA [1 ]
ZAUMSEIL, P [1 ]
WINTER, U [1 ]
机构：
[1] AKAD WISSENSCH DDR,INST PHYS WERKSTOFFBEARBEITUNG,DDR-1166 BERLIN,GER DEM REP
来源：
ACTA CRYSTALLOGRAPHICA SECTION A | 1985年 / 41卷 / MAY期
关键词：
D O I：
10.1107/S0108767385000502
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
引用
收藏
页码：223 / 227
页数：5
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