CHARACTERIZATION OF PROCESS-INDUCED DEFECTS IN SILICON WITH TRIPLE-CRYSTAL DIFFRACTOMETRY

被引：56

作者：

LOMOV, AA ^{[1
]}

ZAUMSEIL, P ^{[1
]}

WINTER, U ^{[1
]}

机构：

[1] AKAD WISSENSCH DDR,INST PHYS WERKSTOFFBEARBEITUNG,DDR-1166 BERLIN,GER DEM REP

来源：

ACTA CRYSTALLOGRAPHICA SECTION A | 1985年 / 41卷 / MAY期

关键词：

D O I：

10.1107/S0108767385000502

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：223 / 227

页数：5

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