CHARACTERIZATION OF PROCESS-INDUCED DEFECTS IN SILICON WITH TRIPLE-CRYSTAL DIFFRACTOMETRY

被引：56

作者：

LOMOV, AA ^{[1
]}

ZAUMSEIL, P ^{[1
]}

WINTER, U ^{[1
]}

机构：

[1] AKAD WISSENSCH DDR,INST PHYS WERKSTOFFBEARBEITUNG,DDR-1166 BERLIN,GER DEM REP

来源：

ACTA CRYSTALLOGRAPHICA SECTION A | 1985年 / 41卷 / MAY期

关键词：

D O I：

10.1107/S0108767385000502

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：223 / 227

页数：5

共 18 条

[1] DIFFUSE SCATTERING FROM DEFECT CLUSTERS NEAR BRAGG REFLECTIONS
DEDERICHS, PH
[J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (04): : 1041 - +
[2] THEORY OF DIFFUSE X-RAY-SCATTERING AND ITS APPLICATION TO STUDY OF POINT-DEFECTS AND THEIR CLUSTERS
DEDERICHS, PH
[J]. JOURNAL OF PHYSICS F-METAL PHYSICS, 1973, 3 (02): : 471 - 496
[3] EHRHART P, 1974, PHYS REV B, V8, P2604
[4] APPLICATIONS OF X-RAY TRIPLE CRYSTAL DIFFRACTOMETRY TO STUDIES ON THE DIFFUSION-INDUCED DEFECTS IN SILICON-CRYSTALS
IIDA, A
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1979, 54 (02): : 701 - 706
[5] SEPARATE MEASUREMENTS OF DYNAMICAL AND KINEMATICAL X-RAY DIFFRACTIONS FROM SILICON-CRYSTALS WITH A TRIPLE CRYSTAL DIFFRACTOMETER
IIDA, A
KOHRA, K
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 51 (02): : 533 - 542
[6] Lal K., 1981, Proceedings of the Indian National Science Academy, Part A, V47, P20
[7] Larson B. C., 1981, Defects in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P151
[8] HUANG DIFFUSE-SCATTERING FROM DISLOCATION LOOPS AND COBALT PRECIPITATES IN COPPER
LARSON, BC
SCHMATZ, W
[J]. PHYSICAL REVIEW B, 1974, 10 (06): : 2307 - 2314
[9] COMPARISON OF DIFFUSE SCATTERING BY DEFECTS MEASURED IN ANOMALOUS TRANSMISSION AND NEAR BRAGG REFLECTIONS
LARSON, BC
YOUNG, FW
[J]. ZEITSCHRIFT FUR NATURFORSCHUNG SECTION A-A JOURNAL OF PHYSICAL SCIENCES, 1973, A 28 (05): : 626 - 632
[10] LARSON BC, 1975, J APPL CRYST, V5, P150