AN ULTRAHIGH-VACUUM, LOW-ENERGY ION-ASSISTED DEPOSITION SYSTEM FOR III-V-SEMICONDUCTOR FILM GROWTH

被引:10
作者
ROHDE, S [1 ]
BARNETT, SA [1 ]
CHOI, CH [1 ]
机构
[1] NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60208
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 03期
关键词
D O I
10.1116/1.575927
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:2273 / 2279
页数:7
相关论文
共 33 条
[1]  
Barnett S. A., 1985, Layered Structures, Epitaxy, and Interfaces Symposium, P285
[2]   MECHANISMS OF EPITAXIAL GAAS CRYSTAL-GROWTH BY SPUTTER DEPOSITION - ROLE OF ION SURFACE INTERACTIONS [J].
BARNETT, SA ;
GREENE, JE .
SURFACE SCIENCE, 1983, 128 (2-3) :401-416
[3]  
Chapman B., 1980, GLOW DISCHARGE PROCE
[4]   MOLECULAR-BEAM EPITAXY OF GASB0.5AS0.5 AND ALXGA1-XSBYAS1-Y LATTICE MATCHED TO INP [J].
CHIU, TH ;
TSANG, WT ;
CHU, SNG ;
SHAH, J ;
DITZENBERGER, JA .
APPLIED PHYSICS LETTERS, 1985, 46 (04) :408-410
[5]   RAMAN AND PHOTOLUMINESCENCE SPECTRA OF GAAS1-XSBX [J].
COHEN, RM ;
CHERNG, MJ ;
BENNER, RE ;
STRINGFELLOW, GB .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (10) :4817-4819
[6]   MASS-SPECTROMETRIC STUDY OF SPUTTERING OF SINGLE CRYSTALS OF GAAS BY LOW-ENERGY A IONS [J].
COMAS, J ;
COOPER, CB .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (07) :2956-&
[7]   SILICON SURFACE CLEANING BY LOW-DOSE ARGON-ION BOMBARDMENT FOR LOW-TEMPERATURE (750-DEGREES-C) EPITAXIAL SILICON DEPOSITION .1. PROCESS CONSIDERATIONS [J].
COMFORT, JH ;
GARVERICK, LM ;
REIF, R .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (08) :3388-3397
[8]  
COMFORT JH, 1987, J APPL PHYS, V62, P3398
[9]  
DUSHMAN S, 1949, SCI F VACUUM TECHNIQ
[10]   HETEROEPITAXY OF GAAS ON SI - THE EFFECT OF INSITU THERMAL ANNEALING UNDER ASH3 [J].
FREUNDLICH, A ;
GRENET, JC ;
NEU, G ;
LEYCURAS, A ;
VERIE, C .
APPLIED PHYSICS LETTERS, 1988, 52 (23) :1976-1978