MAGNETIC-FIELD EFFECT ON RESIDUAL IMPURITY CONCENTRATIONS FOR LEC GAAS CRYSTAL-GROWTH

被引：21

作者：

TERASHIMA, K

NISHIO, J

WASHIZUKA, S

WATANABE, M

机构：

[1] Research and Development Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki, 210, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1987年 / 84卷 / 02期

关键词：

D O I：

10.1016/0022-0248(87)90138-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

SEMICONDUCTING GALLIUM ARSENIDE

引用

页码：247 / 252

页数：6

共 9 条

[1]

Bass S. J., 1968, Journal of Crystal Growth, V3-4Spe, P286, DOI 10.1016/0022-0248(68)90155-3

[2] EFFECT OF WATER-CONTENT OF B2O3 ENCAPSULANT ON SEMI-INSULATING LEC GAAS CRYSTAL [J].

EMORI, H ;

KIKUTA, T ;

INADA, T ;

OBOKATA, T ;

FUKUDA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (05) :L291-L293

[3]

KELLEY KK, 1935, US BUREAU MINES B, V383

[4]

KELLEY KK, 1937, US BUREAU MINES B, V407

[5]

KELLEY KK, 1937, US BUREAU MINES B, V406

[6] CRYSTAL-GROWTH OF COMPLETELY DISLOCATION-FREE AND STRIATION-FREE GAAS [J].

KOHDA, H ;

YAMADA, K ;

NAKANISHI, H ;

KOBAYASHI, T ;

OSAKA, J ;

HOSHIKAWA, K .

JOURNAL OF CRYSTAL GROWTH, 1985, 71 (03) :813-816

[7] A NEW MAGNETIC-FIELD APPLIED PULLING APPARATUS FOR LEC GAAS SINGLE-CRYSTAL GROWTH [J].

TERASHIMA, K ;

FUKUDA, T .

JOURNAL OF CRYSTAL GROWTH, 1983, 63 (02) :423-425

[8] EFFECT OF MAGNETIC-FIELD ON RESIDUAL IMPURITY CONCENTRATION IN LEC GAAS SINGLE-CRYSTAL [J].

TERASHIMA, K ;

ORITO, F ;

KATSUMATA, T ;

FUKUDA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (07) :L485-L487

[9]

TERASHIMA K, IN PRESS

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