INSITU INVESTIGATION OF THE EARLY STAGE OF THE GROWTH OF A-SI-H ON SILICA AND TIN DIOXIDE SUBSTRATES

被引:14
作者
ANTOINE, AM
DREVILLON, B
机构
关键词
D O I
10.1016/0022-3093(87)90336-X
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
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页码:1403 / 1406
页数:4
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共 5 条
[1]   INSITU INVESTIGATION OF THE GROWTH OF RF GLOW-DISCHARGE DEPOSITED AMORPHOUS-GERMANIUM AND SILICON FILMS [J].
ANTOINE, AM ;
DREVILLON, B ;
CABARROCAS, PRI .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (07) :2501-2508
[2]  
ANTOINE AM, 1986, 18TH P INT C PHYS SE, P755
[3]  
ANTOINE AM, IN PRESS J APPL PHYS
[4]   EFFECT OF DEPOSITION CONDITIONS ON THE NUCLEATION AND GROWTH OF GLOW-DISCHARGE A-SI-H [J].
COLLINS, RW ;
CAVESE, JM .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) :1869-1882
[5]   FAST POLARIZATION MODULATED ELLIPSOMETER USING A MICROPROCESSOR SYSTEM FOR DIGITAL FOURIER-ANALYSIS [J].
DREVILLON, B ;
PERRIN, J ;
MARBOT, R ;
VIOLET, A ;
DALBY, JL .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1982, 53 (07) :969-977