MODELING OF THE SILICON INTEGRATED-CIRCUIT DESIGN AND MANUFACTURING PROCESS

被引：14

作者：

DUTTON, RW

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1983.21250

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：968 / 986

页数：19

共 67 条

[1] Antoniadis D., 1978, SUPREM 2 PROGRAM IC
[2] MODELS FOR COMPUTER-SIMULATION OF COMPLETE IC FABRICATION PROCESS
ANTONIADIS, DA
DUTTON, RW
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 412 - 422
[3] PROCESS DESIGN USING TWO-DIMENSIONAL PROCESS AND DEVICE SIMULATORS
CHIN, D
KUMP, MR
LEE, HG
DUTTON, RW
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (02) : 336 - 340
[4] CHIN D, 1983, IEEE T ELECTRON DEV, V30, P744, DOI 10.1109/T-ED.1983.21204
[5] CHIN D, 1983, IEEE T ELECTRON DEV, V30, P993, DOI 10.1109/T-ED.1983.21252
[6] CHIN D, 1982, DEC IEDM, P228
[7] CHIN D, 1983, IEEE DEVICE, V30, P986
[8] DAVANZO DC, 1980, THESIS STANFORD U ST
[9] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON
DEAL, BE
GROVE, AS
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3770 - &
[10] SIS TUNNEL EMITTER - THEORY FOR EMITTERS WITH THIN INTERFACE LAYERS
DEGRAAFF, HC
DEGROOT, JG
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) : 1771 - 1776