Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers

被引：12

作者：

Zhang Yu ^{[1
]}

Wang Guowei ^{[2
]}

Tang Bao ^{[2
]}

Xu Yingqiang ^{[2
]}

Xu Yun ^{[1
]}

Song Guofeng ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Nanooptoelect Lab, Beijing 100083, Peoples R China

[2] Chinese Acad Sci, Inst Semicond, Natl Lab Superlattice & Microstruct, Beijing 100083, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2011年 / 32卷 / 10期

基金：

北京市自然科学基金; 中国科学院基金;

关键词：

InGaSb; AlGaAsSb; strained quantum wells; Te doped;

D O I：

10.1088/1674-4926/32/10/103002

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

2 mu m InGaSb/AlGaAsSb strained quantum wells and a tellurium-doped GaSb buffer layer were grown by molecular beam epitaxy (MBE). The growth parameters of strained quantum wells were optimized by AFM, XRD and PL at 77 K. The optimal growth temperature of quantum wells is 440 degrees C. The PL peak wavelength of quantum wells at 300 K is 1.98 mu m, and the FWHM is 115 nm. Tellurium-doped GaSb buffer layers were optimized by Hall measurement. The optimal doping concentration is 1.127 x 10(18) cm(-3) and the resistivity is 5.295 x 10(-3) Omega.cm.

引用

页数：4

共 13 条

[1] Continuous wave operated 3.2 μm type-I quantum-well diode lasers with the quinary waveguide layer
Belenky, G.
Shterengas, L.
Wang, D.
Kipshidze, G.
Vorobjev, L.
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 24 (11)
[2] CHARACTERIZATION OF TE-DOPED GASB GROWN BY MOLECULAR-BEAM EPITAXY USING SNTE
CHEN, JF
CHO, AY
[J]. JOURNAL OF APPLIED PHYSICS, 1991, 70 (01) : 277 - 281
[3] High-Power 2 μm Diode Lasers With Asymmetric Waveguide
Chen, Jianfeng
Kipshidze, Gela
Shterengas, Leon
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 2010, 46 (10) : 1464 - 1469
[4] 2.3-2.7-μm room temperature CW operation of InGaAsSb-AlGaAsSb broad waveguide SCH-QW diode lasers
Garbuzov, DZ
Lee, H
Khalfin, V
Martinelli, R
Connolly, JC
Belenky, GL
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (07) : 794 - 796
[5] Low threshold high-power room-temperature continuous-wave operation diode laser emitting at 2.26 μm
Garcia, M
Salhi, A
Pérona, A
Rouillard, Y
Sirtori, C
Marcadet, X
Alibert, C
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2004, 16 (05) : 1253 - 1255
[6] Continuous-wave room temperature operated 3.0 μm type IGaSb-based lasers with quinternary AlInGaAsSb barriers
Hosoda, T.
Belenky, G.
Shterengas, L.
Kipshidze, G.
Kisin, M. V.
[J]. APPLIED PHYSICS LETTERS, 2008, 92 (09)
[7] Li Z G, 2009, SEMICONDUCTOR LASERS, V19, P1230, DOI DOI 10.1134/S1054660X09060085
[8] Temperature and injection current dependencies of 2 μm InGaAsSb/AlGaAsSb multiple quantum-well ridge-waveguide lasers
Lin, C
Li, AZ
[J]. JOURNAL OF CRYSTAL GROWTH, 2001, 227 : 591 - 594
[9] Comprehensive analysis of the internal losses in 2.0 μm (AlGaIn)(AsSb) quantum-well diode lasers
Rattunde, M
Schmitz, J
Kiefer, R
Wagner, J
[J]. APPLIED PHYSICS LETTERS, 2004, 84 (23) : 4750 - 4752
[10] EXPERIMENTAL INVESTIGATION OF CONDUCTION BAND OF GASB
SAGAR, A
[J]. PHYSICAL REVIEW, 1960, 117 (01): : 93 - 100

← 1 2 →