THE BEHAVIOR OF BORON (ALSO ARSENIC) IN BILAYERS OF POLYCRYSTALLINE SILICON AND TUNGSTEN DISILICIDE

被引：32

作者：

JAHNEL, F ^{[1
]}

BIERSACK, J ^{[1
]}

CROWDER, BL ^{[1
]}

DHEURLE, FM ^{[1
]}

FINK, D ^{[1
]}

ISAAC, RD ^{[1
]}

LUCCHESE, CJ ^{[1
]}

PETERSSON, CS ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 11期

关键词：

D O I：

10.1063/1.330105

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：7372 / 7378

页数：7

共 28 条

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[5]

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[6]

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[8] SILANE SILICIDATION OF MO THIN-FILMS [J].

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[9] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J].

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