ELECTRONIC-STRUCTURE OF VANADIUM SILICIDES

被引：55

作者：

BISI, O ^{[1
]}

CHIAO, LW ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW B | 1982年 / 25卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.25.4943

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4943 / 4948

页数：6

共 45 条

[1] ELECTRONIC-STRUCTURE OF COMPOUNDS AT PLATINUM - SILICON (III) INTERFACE [J].

ABBATI, I ;

BRAICOVICH, L ;

DEMICHELIS, B ;

BISI, O ;

ROVETTA, R .

SOLID STATE COMMUNICATIONS, 1981, 37 (02) :119-122

[2] ULTRAVIOLET PHOTOELECTRON INVESTIGATION OF SI(111)-AU INTERFACE AT HIGH-TEMPERATURES [J].

ABBATI, I ;

BRAICOVICH, L ;

FRANCIOSI, A .

SOLID STATE COMMUNICATIONS, 1980, 33 (08) :881-884

[3] SPECTROSCOPIC EVIDENCE OF CHEMICAL INTERACTION IN SI-PT INTERFACES AT LIQUID-NITROGEN TEMPERATURE [J].

ABBATI, I ;

BRAICOVICH, L ;

DEMICHELIS, B .

SOLID STATE COMMUNICATIONS, 1980, 36 (02) :145-147

[4]

[Anonymous], PHYSICAL ACOUSTICS P

[5] EXPERIMENTAL BAND-STRUCTURE (ERK) OF V3SI BY ANGLE-RESOLVED PHOTOEMISSION [J].

AONO, M ;

HIMPSEL, FJ ;

EASTMAN, DE .

SOLID STATE COMMUNICATIONS, 1981, 39 (02) :225-228

[6] TREND STUDIES OF A15 COMPOUNDS BY SELF-CONSISTENT BAND CALCULATIONS [J].

ARBMAN, G ;

JARLBORG, T .

SOLID STATE COMMUNICATIONS, 1978, 26 (11) :857-861

[7] MOLECULAR ORBITAL THEORY FOR OCTAHEDRAL AND TETRAHEDRAL METAL COMPLEXES [J].

BASCH, H ;

VISTE, A ;

GRAY, HB .

JOURNAL OF CHEMICAL PHYSICS, 1966, 44 (01) :10-+

[8] TRANSITION-METAL SILICIDES - ASPECTS OF THE CHEMICAL-BOND AND TRENDS IN THE ELECTRONIC-STRUCTURE [J].

BISI, O ;

CALANDRA, C .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (35) :5479-5494

[9] PHOTOEMISSION-STUDIES OF THE SILICON GOLD INTERFACE [J].

BRAICOVICH, L ;

GARNER, CM ;

SKEATH, PR ;

SU, CY ;

CHYE, PW ;

LINDAU, I ;

SPICER, WE .

PHYSICAL REVIEW B, 1979, 20 (12) :5131-5141

[10] ELECTRONIC-STRUCTURE AND FERMI-SURFACE OF YZN ALLOY [J].

BREEZE, A ;

PERKINS, PG .

JOURNAL OF PHYSICS F-METAL PHYSICS, 1975, 5 (02) :255-260

← 1 2 3 4 5 →