INVESTIGATION ON THE EQUILIBRIUM VAPOR-PRESSURE OVER A GAAS MELT

被引：1
|
作者：
HEGEWALD, S
HEIN, K
FRANK, C
JOHN, M
BUHRIG, E
机构：
[1] Technische Universität Bergakademie Freiberg, Institut für NE‐Metallurgie und Reinststoffe, Freiberg, D‐09596
来源：
CRYSTAL RESEARCH AND TECHNOLOGY | 1994年 / 29卷 / 04期
关键词：
D O I：
10.1002/crat.2170290418
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Investigations of the equilibrium vapour pressure over GaAs were carried out by a Bourdon manometer in the temperature range of 1170 - 1260-degrees-C. By means of this method it is possible to measure the vapour pressure in a closed system with high accuracy. At the melting point the vapour pressure is 73 +/- 4 kPa over polycrystalline GaAs produced by low-pressure synthesis and 71 +/- 4 kPa over monocrystalline horizontal gradient freezing material. The experimental and the calculated values were compared.
引用
收藏
页码：549 / 554
页数：6
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