MICROSTRUCTURAL EXAMINATION OF EXTENDED CRYSTAL DEFECTS IN SILICON SELECTIVE EPITAXIAL-GROWTH

被引：3

作者：

YEN, H ^{[1
]}

KVAM, EP ^{[1
]}

BASHIR, R ^{[1
]}

NEUDECK, GW ^{[1
]}

机构：

[1] PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1993年 / 22卷 / 11期

关键词：

OXIDE SILICON INTERFACES; THERMAL EXPANSION MISMATCH; TEM;

D O I：

10.1007/BF02817696

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Selective epitaxial growth has been used to produce electronically isolated devices. The oxide/silicon interfaces in such materials are often associated with regions of poor device performance. In this study, the extended defects in the bulk near interfacial regions are examined by transmission electron microscopy. Process modifications suggest a large portion of the defects were due to thermal expansion mismatch and can be avoided.

引用

页码：1331 / 1339

页数：9

共 17 条

[1]

BASHIR R, 1992, THESIS PURDUE U

[2] CONTROL OF LATERAL EPITAXIAL CHEMICAL VAPOR-DEPOSITION OF SILICON OVER INSULATORS [J].