PASSIVATION OF LASER-INDUCED DEFECTS IN SILICON BY LOW-ENERGY HYDROGEN-ION IMPLANTATION

被引：19
|
作者：
SLAOUI, A
BARHDADI, A
MULLER, JC
SIFFERT, P
机构：
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1986年 / 39卷 / 03期
关键词：
D O I：
10.1007/BF00620729
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：159 / 162
页数：4
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