1/F NOISE IN DOUBLE-HETEROJUNCTION ALGAAS/GAAS LASER-DIODES ON GAAS AND ON SI-SUBSTRATES

被引：5

作者：

FANG, RZ ^{[1
]}

VANRHEENEN, AD ^{[1
]}

VANDERZIEL, A ^{[1
]}

YOUNG, AC ^{[1
]}

VANDERZIEL, JP ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 08期

关键词：

D O I：

10.1063/1.346247

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low-frequency electrical current noise measurements are reported on double-heterojunction AlGaAs/GaAs laser diodes fabricated on GaAs and on Si substrates. The noise spectra show a frequency dependence proportional with f-γ with γ close to unity. The spectral intensity is proportional to the current for smaller currents (<0.1 mA) and levels off at larger currents (>1 mA). The diodes built on the GaAs substrate are 50 times less noisy than the ones built on the Si substrate. This effect is attributed to the fact that the density of dislocations at the Si interface is much larger than at the GaAs substrate/device interface.

引用

页码：4087 / 4090

页数：4

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