MIGRATION-ENHANCED EPITAXY OF GAAS ON EXACTLY (111) ORIENTED SI SUBSTRATE

被引：0
|
作者：
IMAMOTO, H [1 ]
SATO, F [1 ]
TAKAGI, T [1 ]
IMANAKA, K [1 ]
SHIMURA, M [1 ]
机构：
[1] OMRON CORP,CENT RES & DEV LAB,KYOTO 617,JAPAN
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1990年 / 19卷 / 07期
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：29 / 29
页数：1
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