ANALYSIS OF A CF4/O2 PLASMA USING EMISSION, LASER-INDUCED FLUORESCENCE, MASS, AND LANGMUIR SPECTROSCOPY

被引:26
作者
BUCHMANN, LM
HEINRICH, F
HOFFMANN, P
JANES, J
机构
[1] Fraunhofer Gesellschaft, Institut für Mikrostrukturtechnik, 1000 Berlin 33
关键词
D O I
10.1063/1.345317
中图分类号
O59 [应用物理学];
学科分类号
摘要
The behavior of CF2 radicals in CF4/O2 plasmas has been studied as a function of the oxygen partial pressure in an rf reactor with 13.56 MHz, 30 W, and 40 mTorr total pressure. The CF2 ground and excited states were detected by the CF2 (A-X) band spectra applying laser-induced fluorescence and optical emission spectroscopy, respectively. Adding oxygen to the CF4 feed gas, the intensity of the CF2 signals in both spectra showed similar decrease. No evidence is found for a simple correlation between the neutral CF2 densities and the CF+2 ions measured by quadrupole mass spectrometry. Electron densities and temperatures were evaluated to be slightly above 8×109 cm-3 and ∼5 eV, respectively. A simplified model, which takes into account different excitation paths, suggests that direct electron impact of the CF2 ground state species was the dominant mechanism for the population of the electronically excited state. Absolute CF2 and O concentrations depending on the oxygen feed could be estimated. We obtained CF2 densities between 2×10 13 and 2×1012 cm -3, when the oxygen concentration increases from 2% to 23%. The corresponding O densities varied from 1012 to 6×1013 cm-3.
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页码:3635 / 3640
页数:6
相关论文
共 27 条
[11]   A STUDY OF SI PLASMA-ETCHING IN CF4+O2 GAS WITH A PLANAR-TYPE REACTOR [J].
KAWATA, H ;
SHIBANO, T ;
MURATA, K ;
NAGAMI, K .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2720-2726
[12]   SPECTROSCOPY AND PHOTOPHYSICS OF THE CF2A 1B1-X 1A1 SYSTEM [J].
KING, DS ;
SCHENCK, PK ;
STEPHENSON, JC .
JOURNAL OF MOLECULAR SPECTROSCOPY, 1979, 78 (01) :1-15
[13]   A KINETIC-STUDY OF THE PLASMA-ETCHING PROCESS .2. PROBE MEASUREMENTS OF ELECTRON PROPERTIES IN AN RF PLASMA-ETCHING REACTOR [J].
KUSHNER, MJ .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) :2939-2946
[14]   SILICON ETCHING MECHANISM AND ANISOTROPY IN CF4+O2 PLASMA [J].
LEE, YH ;
CHEN, MM .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (10) :5966-5973
[15]   ABSORPTION SPECTRUM OF CF [J].
MATHEWS, CW .
CANADIAN JOURNAL OF PHYSICS, 1967, 45 (07) :2355-&
[16]   PLASMA ETCHING OF SI AND SIO2 - EFFECT OF OXYGEN ADDITIONS TO CF4 PLASMAS [J].
MOGAB, CJ ;
ADAMS, AC ;
FLAMM, DL .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :3796-3803
[17]  
PANG S, 1983, MATER RES SOC S P, V17, P161
[18]  
Pearse RWB, 1976, IDENTIFI CATION MOL, V4th, DOI DOI 10.1007/978-94-009-5758-9
[19]   A MODEL OF THE CHEMICAL PROCESSES OCCURRING IN CF-4/O2 DISCHARGES USED IN PLASMA-ETCHING [J].
PLUMB, IC ;
RYAN, KR .
PLASMA CHEMISTRY AND PLASMA PROCESSING, 1986, 6 (03) :205-230
[20]   MASS-SPECTROMETRIC STUDY OF PLASMA ETCHING [J].
RABY, BA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02) :205-208