ALGAINP DOUBLE HETEROSTRUCTURE VISIBLE-LIGHT LASER-DIODES WITH A GAINP ACTIVE LAYER GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

被引：48

作者：

KOBAYASHI, K

HINO, I

GOMYO, A

KAWATA, S

SUZUKI, T

机构：

[1] NEC Corp, Kawasaki, Jpn, NEC Corp, Kawasaki, Jpn

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1987年 / 23卷 / 06期

关键词：

D O I：

10.1109/JQE.1987.1073424

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

23

引用

收藏

页码：704 / 711

页数：8

相关论文

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