ALGAINP DOUBLE HETEROSTRUCTURE VISIBLE-LIGHT LASER-DIODES WITH A GAINP ACTIVE LAYER GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

被引：49
作者：
KOBAYASHI, K
HINO, I
GOMYO, A
KAWATA, S
SUZUKI, T
机构：
[1] NEC Corp, Kawasaki, Jpn, NEC Corp, Kawasaki, Jpn
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1987年 / 23卷 / 06期
关键词：
D O I：
10.1109/JQE.1987.1073424
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
23
引用
收藏
页码：704 / 711
页数：8
相关论文
共 22 条
[1]   OPTICALLY PUMPED LASER ACTION AT 77-K OF INGAP/INGAAIP DOUBLE HETEROSTRUCTURES GROWN BY MBE [J].
ASAHI, H ;
KAWAMURA, Y ;
NAGAI, H ;
IKEGAMI, T .
ELECTRONICS LETTERS, 1982, 18 (02) :62-63
[2]   MOLECULAR-BEAM EPITAXIAL-GROWTH OF INGAAIP ON (100) GAAS [J].
ASAHI, H ;
KAWAMURA, Y ;
NAGAI, H .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) :4928-4931
[3]  
CASEY HC, 1978, HETEROSTRUCTURE LA B, P43
[4]  
Duchemin J.-P., 1979, INST PHYS CONF SE, V45, P10
[5]   STUDIES OF GAXIN1-XP LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY - EFFECTS OF V/III RATIO AND GROWTH TEMPERATURE [J].
GOMYO, A ;
KOBAYASHI, K ;
KAWATA, S ;
HINO, I ;
SUZUKI, T ;
YUASA, T .
JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :367-373
[6]  
GOMYO A, IN PRESS ELECTRON LE
[7]  
GOMYO A, IN PRESS APPL PHYS L
[8]   CONTINUOUS WAVE OPERATION (77-K) OF YELLOW (583.6 NM) EMITTING ALGALNP DOUBLE HETEROSTRUCTURE LASER-DIODES [J].
HINO, I ;
KAWATA, S ;
GOMYO, A ;
KOBAYASHI, K ;
SUZUKI, T .
APPLIED PHYSICS LETTERS, 1986, 48 (09) :557-558
[9]   MOCVD GROWTH OF (ALXGA1-X)YIN1-YP AND DOUBLE HETEROSTRUCTURES FOR VISIBLE-LIGHT LASERS [J].
HINO, I ;
SUZUKI, T .
JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :483-489
[10]   ROOM-TEMPERATURE PULSED OPERATION OF ALGALNP GALNP ALGALNP DOUBLE HETEROSTRUCTURE VISIBLE-LIGHT LASER-DIODES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
HINO, I ;
GOMYO, A ;
KOBAYASHI, K ;
SUZUKI, T ;
NISHIDA, K .
APPLIED PHYSICS LETTERS, 1983, 43 (11) :987-989
123