DEGRADATION SOURCES IN GAAS-ALGAAS DOUBLE-HETEROSTRUCTURE LASERS

被引：39

作者：

ITO, R ^{[1
]}

NAKASHIMA, H ^{[1
]}

KISHINO, S ^{[1
]}

NAKADA, O ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI 185,TOKYO,JAPAN

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1975年 / QE11卷 / 07期

关键词：

D O I：

10.1109/JQE.1975.1068647

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：551 / 556

页数：6

共 18 条

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[5] GROWTH OF DARK LINES FROM CRYSTAL DEFECTS IN GAAS-GAALAS DOUBLE HETEROSTRUCTURE CRYSTALS [J].

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[6] SIMPLE METHOD FOR OBTAINING LUMINESCENT PATTERN OF DOUBLE HETEROSTRUCTURE CRYSTALS [J].

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[7]

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[8] OBSERVATION OF DARK-LINE DEGRADATION SITES IN ALGAAS-GAAS DH LASER MATERIAL BY ETCHING AND PHASE-CONTRAST MICROSCOPY [J].

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[9] MACROSCOPIC DETERIORATION OF FLUORESCENCE FROM ALCHIGA1-CHIAS-GAAS DH MATERIAL FOLLOWING MICROSCOPIC PHYSICAL DAMAGE [J].

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[10] CONTINUOUS OPERATION OVER 2500 H OF DOUBLE HETEROSTRUCTURE LASER-DIODES WITH OUTPUT POWERS MORE THAN 80 MW [J].

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