How to analyse relaxation and leakage currents of dielectric thin films: Simulation of voltage-step and voltage-ramp techniques

被引：16

作者：

Dietz, GW

Waser, R

机构：

[1] Institut für Werkstoffe der Elektrotechnik (IWE), RWTH Aachen University of Technology, Federal Republic of Germany

来源：

INTEGRATED FERROELECTRICS | 1995年 / 9卷 / 04期

关键词：

thin films; titanate; dielectric relaxation; leakage current; impedance spectroscopy;

D O I：

10.1080/10584589508219666

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An empirical electrical equivalent circuit for dielectric thin films, based on experimental data, is developed. Current responses to voltage-steps and to voltage-ramps are calculated and compared with experimental data The simulation allows us to separate current contributions of different physical processes while the experiment only reveals the sum of the currents.

引用

页码：317 / 332

页数：16

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