ALUMINUM GETTERING IN SILICON-WAFERS

被引：6
|
作者：
MARTINUZZI, S
PORRE, O
PERICHAUD, I
PASQUINELLI, M
机构：
来源：
JOURNAL DE PHYSIQUE III | 1995年 / 5卷 / 09期
关键词：
D O I：
10.1051/jp3:1995100
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effect of an evaporated thick aluminium paper on electrical properties of multicrystalline and gold contaminated FZ monocrystalline silicon wafers was investigated. By means of minority carrier diffusion length measurements and Deep Level Transient Spectroscopy, it was deduced that the material improvements observed after annealing at 900 degrees C are due to gettering of metallic impurities in the Al-Si alloyed layer.
引用
收藏
页码：1337 / 1343
页数：7
相关论文
共 50 条
  • [31] INTERFACIAL STRUCTURE OF BONDED SILICON ON SILICON-WAFERS
    BENAMARA, M
    ROCHER, A
    LAANAB, L
    CLAVERIE, A
    LAPORTE, A
    SARRABAYROUSSE, G
    LESCOUZERES, L
    PEYRELAVIGNE, A
    COMPTES RENDUS DE L ACADEMIE DES SCIENCES SERIE II, 1994, 318 (11): : 1459 - 1464
  • [32] BONDING OF SILICON-WAFERS FOR SILICON-ON-INSULATOR
    MASZARA, WP
    GOETZ, G
    CAVIGLIA, A
    MCKITTERICK, JB
    JOURNAL OF APPLIED PHYSICS, 1988, 64 (10) : 4943 - 4950
  • [33] MEASUREMENT OF SUBSURFACE DAMAGE IN SILICON-WAFERS
    BISMAYER, U
    BRINKSMEIER, E
    GUTTLER, B
    SEIBT, H
    MENZ, C
    PRECISION ENGINEERING-JOURNAL OF THE AMERICAN SOCIETY FOR PRECISION ENGINEERING, 1994, 16 (02): : 139 - 144
  • [34] Gettering of iron by aluminum oxide thin films on silicon wafers: Kinetics and mechanisms
    Le, Tien Trong
    Yang, Zhongshu
    Liang, Wensheng
    Macdonald, Daniel
    Liu, AnYao
    JOURNAL OF APPLIED PHYSICS, 2024, 135 (06)
  • [35] INFRARED LBIC SCAN MAPS APPLIED TO ALUMINUM GETTERED MULTICRYSTALLINE SILICON-WAFERS
    NATOLI, JY
    PASQUINELLI, M
    FLORET, F
    MARTINUZZI, S
    JOURNAL DE PHYSIQUE IV, 1991, 1 (C6): : 237 - 238
  • [36] MICROROUGHNESS MEASUREMENTS ON POLISHED SILICON-WAFERS
    ABE, T
    STEIGMEIER, EF
    HAGLEITNER, W
    PIDDUCK, AJ
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (03): : 721 - 728
  • [37] Limiting factors of backside external gettering by nanocavities and aluminum-silicon alloying in silicon wafers
    Henquinet, NG
    Martinuzzi, S
    DEFECT AND IMPURITY ENGINEERED SEMICONDUCTORS II, 1998, 510 : 221 - 226
  • [38] 1/F NOISE IN SILICON-WAFERS
    BLACK, RD
    WEISSMAN, MB
    RESTLE, PJ
    JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) : 6280 - 6289
  • [39] SILICON-WAFERS FOR THE 1990-S
    SEIDEL, TE
    JOURNAL OF CRYSTAL GROWTH, 1987, 85 (1-2) : 97 - 105
  • [40] DENUDED ZONES IN CZOCHRALSKI SILICON-WAFERS
    WANG, P
    CHANG, L
    DEMER, LJ
    VARKER, CJ
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (08) : 1948 - 1952
12345