ALUMINUM GETTERING IN SILICON-WAFERS

被引：6
|
作者：
MARTINUZZI, S
PORRE, O
PERICHAUD, I
PASQUINELLI, M
机构：
来源：
JOURNAL DE PHYSIQUE III | 1995年 / 5卷 / 09期
关键词：
D O I：
10.1051/jp3:1995100
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effect of an evaporated thick aluminium paper on electrical properties of multicrystalline and gold contaminated FZ monocrystalline silicon wafers was investigated. By means of minority carrier diffusion length measurements and Deep Level Transient Spectroscopy, it was deduced that the material improvements observed after annealing at 900 degrees C are due to gettering of metallic impurities in the Al-Si alloyed layer.
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页码：1337 / 1343
页数：7
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