PHOTOSENSITIVITY AND SWITCHING OF ZNSE/GAAS HETEROSTRUCTURES

被引：0
|
作者：
MARKOV, EA
ZLENKO, AA
ZHUKOV, IA
机构：
[1] General Physics Institute, Moscow 117942
来源：
JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 09期
关键词：
D O I：
10.1063/1.359447
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
High photosensitivity increasing with decreasing incident light intensity and switching are observed in ZnSe/GaAs heterostructures. A model based on the possibility of conduction induced by carriers hopping between deep defect centers located in the bulk of ZnSe is presented. © 1995 American Institute of Physics.
引用
收藏
页码：4513 / 4517
页数：5
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