CHEMICAL AND ELECTRICAL CHARACTERIZATION OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS TREATED BY ELECTRON-CYCLOTRON RESONANCE PLASMAS

被引：8
|
作者：
LI, PW
WANG, Q
YANG, ES
机构：
[1] Department of Electrical Engineering, Columbia University, New York
来源：
APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 16期
关键词：
D O I：
10.1063/1.107122
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effects of electron cyclotron resonance (ECR) hydrogen, nitrogen, and ammonia plasma have been studied by x-ray photoelectron spectroscopy. Experimental evidence shows that the ECR hydrogen plasma removes the native oxide on the GaAs surface and recovers the surface order. A mixed nitride-oxide surface layer is formed after nitrogen and ammonia plasma treatments. The appearance of the nitride layer correlates with the passivation of the GaAs surface and the much improved I-V characteristics of AlGaAs/GaAs heterojunction bipolar transistors.
引用
收藏
页码：1996 / 1998
页数：3
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