OXIDATION OF SI(100) SURFACES WITH ULTRATHIN METAL OVERLAYERS IN OZONE ATMOSPHERE

Si(100) substrates with Ag, Au, Bi and Ba ultrathin overlayers were heated in distilled ozone atmospheres. It was found that Ag, Au, Bi and Ba atoms remained on the Si(100) surfaces at substrate temperatures T(s) less-than-or-equal-to 550, 780, 300 and 650-degrees-C, respectively. Au atoms diffused to a depth of approximately 200 angstrom from the Si(100) surface at T(s) = 780-degrees-C. Silicon oxide layers with a thickness of 10-20 angstrom were formed in the Si(100) substrates with the metal overlayers. Clean Si(100) substrate was also oxidized at T(s) = 650-degrees-C under the same conditions, and the thickness of resultant Si oxide in the Si(100) substrate was almost the same as in the Si(100) with the metal overlayers.