PHOTOREFLECTANCE SPECTRA FROM GAAS BUFFER LAYER OF GAAS/ALAS MULTIPLE QUANTUM WELL/GAAS BUFFER/GAAS SUBSTRATE

被引：3

作者：

HARAGUCHI, M ^{[1
]}

NAKAGAWA, Y ^{[1
]}

FUKUI, M ^{[1
]}

MUTO, S ^{[1
]}

机构：

[1] FUJITSU LABS LTD,ATSUGI 24301,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 07期

关键词：

PHOTOREFLECTANCE; GAAS BUFFER; GAAS/ALAS MULTIPLE QUANTUM WELL; BUILT-IN FIELD;

D O I：

10.1143/JJAP.30.1367

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have measured photoreflectance spectra from a GaAs buffer of a GaAs/AlAs multiple quantum well (MQW)/GaAs buffer/GaAs substrate. In order to interpret our experimental results, we have tried to modify Aspnes's low field limit theory for electroreflectance. From this treatment, the built-in electric field at the interface between the MQW layer and the GaAs buffer layer is estimated to be 35 kV/cm. It has been shown that PR spectra at various points on the sample surface resolve the question on the homogeneity of the MQW layer thickness.

引用

页码：1367 / 1372

页数：6

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