DEPENDENCE OF LINEWIDTH ENHANCEMENT FACTOR-ALPHA ON WAVE-GUIDE STRUCTURE IN SEMICONDUCTOR-LASERS

被引:29
作者
FURUYA, K
机构
关键词
D O I
10.1049/el:19850141
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:200 / 201
页数:2
相关论文
共 7 条
[1]   THEORY OF THE LINEWIDTH OF SEMICONDUCTOR-LASERS [J].
HENRY, CH .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (02) :259-264
[2]   WAVELENGTH VARIATION OF 1.6 MU-M WAVELENGTH BURIED HETEROSTRUCTURE GAINASP INP LASERS DUE TO DIRECT MODULATION [J].
KISHINO, K ;
AOKI, S ;
SUEMATSU, Y .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (03) :343-351
[3]   NATURE OF WAVELENGTH CHIRPING IN DIRECTLY MODULATED SEMICONDUCTOR-LASERS [J].
KOCH, TL ;
BOWERS, JE .
ELECTRONICS LETTERS, 1984, 20 (25-2) :1038-1040
[4]  
KOYAMA F, 1984, GROUP M IECE JAPAN, P23
[5]   LATERAL TRANSVERSE-MODE INSTABILITY AND ITS STABILIZATION IN STRIPE GEOMETRY INJECTION-LASERS [J].
LANG, R .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (08) :718-726
[6]   SPONTANEOUS RECOMBINATION, GAIN AND REFRACTIVE-INDEX VARIATION FOR 1.6 MU-M WAVELENGTH INGAASP-INP LASERS [J].
STUBKJAER, K ;
ASADA, M ;
ARAI, S ;
SUEMATSU, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (08) :1499-1505
[7]  
SUEMATSU Y, 1983, J LIGHTWAVE TECHNOL, V1, P161