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DEPENDENCE OF LINEWIDTH ENHANCEMENT FACTOR-ALPHA ON WAVE-GUIDE STRUCTURE IN SEMICONDUCTOR-LASERS
被引:29
作者
:
FURUYA, K
论文数:
0
引用数:
0
h-index:
0
FURUYA, K
机构
:
来源
:
ELECTRONICS LETTERS
|
1985年
/ 21卷
/ 05期
关键词
:
D O I
:
10.1049/el:19850141
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:200 / 201
页数:2
相关论文
共 7 条
[1]
THEORY OF THE LINEWIDTH OF SEMICONDUCTOR-LASERS
HENRY, CH
论文数:
0
引用数:
0
h-index:
0
HENRY, CH
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1982,
18
(02)
: 259
-
264
[2]
WAVELENGTH VARIATION OF 1.6 MU-M WAVELENGTH BURIED HETEROSTRUCTURE GAINASP INP LASERS DUE TO DIRECT MODULATION
KISHINO, K
论文数:
0
引用数:
0
h-index:
0
KISHINO, K
AOKI, S
论文数:
0
引用数:
0
h-index:
0
AOKI, S
SUEMATSU, Y
论文数:
0
引用数:
0
h-index:
0
SUEMATSU, Y
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1982,
18
(03)
: 343
-
351
[3]
NATURE OF WAVELENGTH CHIRPING IN DIRECTLY MODULATED SEMICONDUCTOR-LASERS
KOCH, TL
论文数:
0
引用数:
0
h-index:
0
KOCH, TL
BOWERS, JE
论文数:
0
引用数:
0
h-index:
0
BOWERS, JE
[J].
ELECTRONICS LETTERS,
1984,
20
(25-2)
: 1038
-
1040
[4]
KOYAMA F, 1984, GROUP M IECE JAPAN, P23
[5]
LATERAL TRANSVERSE-MODE INSTABILITY AND ITS STABILIZATION IN STRIPE GEOMETRY INJECTION-LASERS
LANG, R
论文数:
0
引用数:
0
h-index:
0
机构:
Laser Equipment Development Division, Nippon Electric Company, Ltd.
LANG, R
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1979,
15
(08)
: 718
-
726
[6]
SPONTANEOUS RECOMBINATION, GAIN AND REFRACTIVE-INDEX VARIATION FOR 1.6 MU-M WAVELENGTH INGAASP-INP LASERS
STUBKJAER, K
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL,DEPT PHYS ELECTR,MEGURO KU,TOKYO 152,JAPAN
TOKYO INST TECHNOL,DEPT PHYS ELECTR,MEGURO KU,TOKYO 152,JAPAN
STUBKJAER, K
论文数:
引用数:
h-index:
机构:
ASADA, M
ARAI, S
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL,DEPT PHYS ELECTR,MEGURO KU,TOKYO 152,JAPAN
TOKYO INST TECHNOL,DEPT PHYS ELECTR,MEGURO KU,TOKYO 152,JAPAN
ARAI, S
SUEMATSU, Y
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL,DEPT PHYS ELECTR,MEGURO KU,TOKYO 152,JAPAN
TOKYO INST TECHNOL,DEPT PHYS ELECTR,MEGURO KU,TOKYO 152,JAPAN
SUEMATSU, Y
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1981,
20
(08)
: 1499
-
1505
[7]
SUEMATSU Y, 1983, J LIGHTWAVE TECHNOL, V1, P161
←
1
→
共 7 条
[1]
THEORY OF THE LINEWIDTH OF SEMICONDUCTOR-LASERS
HENRY, CH
论文数:
0
引用数:
0
h-index:
0
HENRY, CH
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1982,
18
(02)
: 259
-
264
[2]
WAVELENGTH VARIATION OF 1.6 MU-M WAVELENGTH BURIED HETEROSTRUCTURE GAINASP INP LASERS DUE TO DIRECT MODULATION
KISHINO, K
论文数:
0
引用数:
0
h-index:
0
KISHINO, K
AOKI, S
论文数:
0
引用数:
0
h-index:
0
AOKI, S
SUEMATSU, Y
论文数:
0
引用数:
0
h-index:
0
SUEMATSU, Y
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1982,
18
(03)
: 343
-
351
[3]
NATURE OF WAVELENGTH CHIRPING IN DIRECTLY MODULATED SEMICONDUCTOR-LASERS
KOCH, TL
论文数:
0
引用数:
0
h-index:
0
KOCH, TL
BOWERS, JE
论文数:
0
引用数:
0
h-index:
0
BOWERS, JE
[J].
ELECTRONICS LETTERS,
1984,
20
(25-2)
: 1038
-
1040
[4]
KOYAMA F, 1984, GROUP M IECE JAPAN, P23
[5]
LATERAL TRANSVERSE-MODE INSTABILITY AND ITS STABILIZATION IN STRIPE GEOMETRY INJECTION-LASERS
LANG, R
论文数:
0
引用数:
0
h-index:
0
机构:
Laser Equipment Development Division, Nippon Electric Company, Ltd.
LANG, R
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1979,
15
(08)
: 718
-
726
[6]
SPONTANEOUS RECOMBINATION, GAIN AND REFRACTIVE-INDEX VARIATION FOR 1.6 MU-M WAVELENGTH INGAASP-INP LASERS
STUBKJAER, K
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL,DEPT PHYS ELECTR,MEGURO KU,TOKYO 152,JAPAN
TOKYO INST TECHNOL,DEPT PHYS ELECTR,MEGURO KU,TOKYO 152,JAPAN
STUBKJAER, K
论文数:
引用数:
h-index:
机构:
ASADA, M
ARAI, S
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL,DEPT PHYS ELECTR,MEGURO KU,TOKYO 152,JAPAN
TOKYO INST TECHNOL,DEPT PHYS ELECTR,MEGURO KU,TOKYO 152,JAPAN
ARAI, S
SUEMATSU, Y
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL,DEPT PHYS ELECTR,MEGURO KU,TOKYO 152,JAPAN
TOKYO INST TECHNOL,DEPT PHYS ELECTR,MEGURO KU,TOKYO 152,JAPAN
SUEMATSU, Y
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1981,
20
(08)
: 1499
-
1505
[7]
SUEMATSU Y, 1983, J LIGHTWAVE TECHNOL, V1, P161
←
1
→