AC SURFACE PHOTOVOLTAGES IN STRONGLY-INVERTED OXIDIZED P-TYPE SILICON-WAFERS

被引:81
作者
MUNAKATA, C
NISHIMATSU, S
HONMA, N
YAGI, K
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1984年 / 23卷 / 11期
关键词
D O I
10.1143/JJAP.23.1451
中图分类号
O59 [应用物理学];
学科分类号
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页码:1451 / 1461
页数:11
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共 46 条
[41]   IMPROVED CHARACTERIZATION OF THE SI-SIO2 INTERFACE [J].
SU, P ;
SHER, A ;
TSUO, YH ;
MORIARTY, JA ;
MILLER, WE .
APPLIED PHYSICS LETTERS, 1980, 36 (12) :991-993
[42]  
SZE SM, 1969, PHYSICS SEMICONDUCTO, P107
[43]  
SZE SM, 1969, PHYSICS SEMICONDUCTO, pCH9
[44]  
VANDERZIEL A, 1959, SOLID STATE PHYSICAL
[45]   SURFACE PHOTOVOLTAGE MEASUREMENTS ON CADMIUM SULFIDE [J].
WILLIAMS, R .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (AUG) :1057-&